红外与毫米波学报, 2017, 36 (2): 220, 网络出版: 2017-06-06
片上太赫兹天线集成器件LT-GaAs外延转移工艺
Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device
片上太赫兹天线集成 外延层转移 化学湿法腐蚀 on-chip THz antenna integrated device LT-GaAs LT-GaAs epitaxial layer transfer wet chemical etching
摘要
提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs(LT-GaAs)外延层的转移工艺, 使用HNO3-NH4OH-H2O-C3H8O7·H2O溶液-H2O2-HCl腐蚀体系化学湿法腐蚀分子束外延(MBE)生长的外延材料, Hall测试表明MBE生长的此外延材料电阻率在106 Ω·cm量级.剥离半绝缘GaAs(SI-GaAs)衬底层与Al0.9Ga0.1As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物(COP)键合的结构.原子力显微镜(AFM)、扫描电子显微镜(SEM)、高倍显微镜形貌表征表明剥离后的结构表面平整光滑, 表面粗糙度(RMS)为2.28 nm, EDAX能谱仪分析显示该结构中不含Al组分, 满足光刻形成光电导开关的要求.
Abstract
A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.
郭春妍, 徐建星, 彭红玲, 倪海桥, 汪韬, 田进寿, 牛智川, 吴朝新, 左剑, 张存林. 片上太赫兹天线集成器件LT-GaAs外延转移工艺[J]. 红外与毫米波学报, 2017, 36(2): 220. GUO Chun-Yan, XU Jian-Xing, PENG Hong-Ling, NI Hai-Qiao, WANG Tao, TIAN Jin-Shou, NIU Zhi-Chuan, WU Zhao-Xin, ZUO Jian, ZHANG Cun-Lin. Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 220.
PDF全文
