Chinese Optics Letters, 2017, 15 (8): 082301, Published Online: Jul. 20, 2018
4 × 25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique
Abstract
We use the selective area growth (SAG) technique to monolithically integrate InP-based 4-channel arrayed waveguide gratings (AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below 20 dB for both channel spacing chips.
Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu.