强激光与粒子束, 2017, 29 (8): 083202, 网络出版: 2017-06-30
强电磁脉冲上升时间对RS触发器损伤阈值仿真分析
Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop
上升时间 RS触发器 电磁脉冲 损伤阈值 失效机理 rise time RS flip-flop electromagnetic pulse damage threshold failure mechanism
摘要
对RS触发器中金属-氧化物-半导体场效应管(MOSFET)的烧毁作用进行研究,通过仿真分析在不同入射端口、不同上升时间的条件下RS触发器的损伤阈值,结合其内部温度分布图完成失效机理分析,进而得出对于上升时间长的强电磁脉冲,需要更高的峰值场强、更长的时间才能将RS触发器烧毁。
Abstract
This paper investigates the thermal run away mechanism of metal oxide semiconductor field effect transistors (MOSFETs) in RS triggers. Simulations are performed to study the RS trigger damage threshold under different gate input and rising time, and the internal temperature distribution is plotted. Through the analysis, this paper concludes that the strong electromagnetic pulses with longer rise time should have higher peak intensity and longer time to damage RS triggers.
张子剑, 陈曦, 李茜华, 王頔, 龚博. 强电磁脉冲上升时间对RS触发器损伤阈值仿真分析[J]. 强激光与粒子束, 2017, 29(8): 083202. Zhang Zijian, Chen Xi, Li Qianhua, Wang Di, Gong Bo. Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop[J]. High Power Laser and Particle Beams, 2017, 29(8): 083202.