半导体光电, 2017, 38 (3): 361, 网络出版: 2017-07-10
拉通型硅基APD保护环工艺研究
Study on Guard-ring Process of Silicon Reach-through APD
拉通型Si-APD 保护环 离子注入技术 扩散技术 成品率 reach-through Si-APD guard-ring ion implantation diffusion technique yield
摘要
研究了离子注入后推结与扩散两种掺杂方式制作保护环对拉通型硅基雪崩光电二极管(Si-APD)器件成品率的影响, 对比在不同工艺条件下器件反向击穿电压、暗电流的变化情况。研究结果表明, 采用离子注入后推结的方式, 在注入后3 h@1 100 ℃条件下的成品率为94%; 采用扩散掺杂方式, 器件成品率不超过65%。两种方式对器件反向击穿电压影响较小且暗电流抑制效果相当。离子注入后推结制备保护环的方式更适合Si-APD制程。
Abstract
The effects of the junction drive-in and diffusion techniques for fabrication of guard-ring after ion implantation on the yield of silicon reach-through APD (Si-APD) have been investigated in this paper. The reverse breakdown voltage and dark current of the device fabricated under different process conditions have been compared. The results show that the yield of the devices fabricated by the junction drive-in technique after implantation has been up to 94% at 3 h@1 100 ℃, while the yield of the devices fabricated by the diffusion technique is no more than 65%. There is little difference between the two process conditions about dark current and reverse breakdown voltage. Obviously, from the comparison of the two kinds of process, the guard-ring fabricated by The junction drive-in technique after ion implantation for fabricating the guard-ring is more suitable for Si-APD process over the diffusion technique.
李睿智, 袁安波, 曾武贤. 拉通型硅基APD保护环工艺研究[J]. 半导体光电, 2017, 38(3): 361. LI Ruizhi, YUAN Anbo, ZENG Wuxian. Study on Guard-ring Process of Silicon Reach-through APD[J]. Semiconductor Optoelectronics, 2017, 38(3): 361.