石墨烯独特的结构和性能使其在纳米电子、 半导体器件等领域成为研究的热点, 但其零带隙的特性严重限制了其应用。 采用化学气化沉积法制备了多层石墨烯, 并使用溴蒸汽对制备的多层石墨烯进行掺杂, 分析研究了溴蒸汽化学掺杂对石墨烯带隙的影响。 为了对比溴蒸汽掺杂对石墨烯带隙的影响, 使用633 nm He-Ne光分别测量了石墨烯掺杂前和掺杂后的拉曼光谱, 根据拉曼光谱计算了石墨烯费米能级移动与掺杂溴蒸汽之间的关系。 实验结果表明: 溴蒸汽掺杂对石墨烯拉曼光谱G带产生影响; 随着掺杂溴蒸汽体积的增加, 拉曼光谱G带向高频移动并逐渐趋于稳定； G带和2D带强度比也迅速增加, 并最终趋于稳定。 费米能级的移动与G峰位置成线性关系, 利用G峰峰值位置与费米能级实验关系式计算了溴掺杂后石墨烯的费米能级, 分析了化学掺杂对石墨烯带隙的影响。

Graphene has attracted great attention in nanoelectronics, semiconductor, because of its special structure and performance, however, since its bandgap is zero, its application is limited seriously. The multi-layer graphene is prepared by chemical vapor deposition (CVD), and then doped by Br2 is to investigate and analyze the Br2 effect on graphene bandgap. In order to compare how the Br2 effect on graphene bandgap, the Raman is measured with 633 nm He-Ne laser before and after doped, the relation between graphene bandgap shift and Br2 volume is calculated according to Raman results, the results show that: Br2 doping has influence on G band, and the G band is energy up-shifted with Br2 volume before reaching a stable value; the G/2D intensity ratio also increase with Br2 volume before reaching a stable value. The measured Raman peak position blue-shifts linearly with Fermi energy, the graphene Fermi energy is calculated according to the relation between G band peak position and Fermi energy before analyzing how the Br2 effect on graphene bandgap.