发光学报, 2017, 38 (8): 1056, 网络出版: 2017-08-30
Be掺杂对InGaAsN/GaAs量子阱性能的提高
Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
稀氮化物 分子束外延 量子阱 应变弛豫 X射线衍射 dilute nitride molecular beam epitaxy quantum well strain relaxation X-ray diffraction
摘要
InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质, 并且发光波长发生了红移。X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放。对比退火前, 退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移; 而对于掺铍的量子阱样品而言, 这样的偏移要小很多。
Abstract
Heavily doping beryllium in the InGaAsN/GaAs quantum well (QW) can improve the optical properties significantly, while the emission wavelength is red-shifted. The X-ray diffraction (XRD) rocking curves provide clear-cut evidence that the doping of Be suppresses the strain relaxation in InGaAsN(Be)/GaAs QW during thermal annealing. An obvious XRD rocking curve peak shift of no-Be QW diffraction towards GaAs substrate peak before and after annealing was observed, while the shift for the Be-doped QW was much smaller than undoped QW.
霍大云, 石震武, 徐超, 邓长威, 陈晨, 陈林森, 王文新, 彭长四. Be掺杂对InGaAsN/GaAs量子阱性能的提高[J]. 发光学报, 2017, 38(8): 1056. HUO Da-yun, SHI Zhen-wu, XU Chao, DENG Chang-wei, CHEN Chen, CHEN Lin-sen, WANG Wen-xin, PENG Chang-si. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping[J]. Chinese Journal of Luminescence, 2017, 38(8): 1056.