垂直腔面发射半导体激光器(VCSEL)限制电流流入的方式有许多种, 其中氧化孔径(电流注入孔径)限制法制备工艺简单, 成为普遍选用的方式。模拟结果显示, 对于氧化孔径限制VCSEL,在氧化孔径边缘处电流密度最大。模拟P型电极内环半径对注入孔径电流密度的影响, 结果表明P型电极内环半径越大, 器件氧化孔径边缘的电流密度越大, 对应的器件工作电压越大, 输出光功率越低。综合考虑器件结构的光场分布和发散角分布, 计算器件表面光斑面积, 得到P型电极内环半径的最优值为8 μm。

There are many ways to limit the current flowing in the vertical-cavity surface-emitting laser (VCSEL), in which the preparation technology of oxide aperture (current injection aperture) confining method is simple. So the oxide aperture confining method becomes a universal choice. The simulation result shows that the maximum current density is at the edge of the oxide aperture for the oxide aperture confined VCSEL. The influence of the inner radius of the P-type electrode on the current density of the injection aperture is also simulated. The results show that when the inner radius of the P-type electrode increases, the current density at the edge of the device oxide aperture increases, the corresponding device working voltage increases, and the output optical power declines. The device surface spot area is calculated with optical field distribution and divergence angle distribution of the device structure comprehensively considered. The optimal inner radius of the P-type electrode is 8 μｍ.