发光学报, 2017, 38 (10): 1273, 网络出版: 2017-10-17
化学气相沉积法制备β-Ga2O3纳米结构及其缺陷发光性质研究
Defects Luminescence Behavior of β-Ga2O3 Nanostructures Synthesized by Chemical Vapor Deposition
化学气相沉积 阴极射线发光 氧空位 chemical vapor deposition method β-Ga2O3 β-Ga2O3 cathode luminescence(CL) oxygen vacancies
摘要
利用化学气相沉积法(CVD), 在不同压强下分别得到β-Ga2O3纳米线(NWs)和纳米带(NBs)。研究结果表明, 获得的NWs与NBs均为单斜结构的β-Ga2O3, 且NWs结晶质量优于NBs。在阴极射线发光(CL)光谱中, 发现NWs与NBs在近紫外和蓝光波段有较强的发光。对比NWs与NBs的CL光谱, 推断β-Ga2O3在374 nm和459 nm的近紫外和蓝色发光峰分别来自于Ⅰ型和Ⅱ型氧空位(VO(I)和VO(Ⅱ))的缺陷复合。
Abstract
β-Ga2O3 nanowires (NWs) and nanoribbons (NBs) were synthesized under different gas flow rates via chemical vapor deposition (CVD) method. The results show that the NWs and NBs are monoclinic structure. NWs has higher crystal quality than NBs. The cathode luminescence (CL) spectra show that the NWs and NBs have strong UV-blue emission band. By comparing the CL spectra of the NWs and NBs, it is found that the UV and blue luminescence of β-Ga2O3 NWs and NBs located at 374 and 459 nm, mainly due to radiative recombination emission of oxygen vacancies (VO(Ⅰ) and VO(Ⅱ)).
薛金玲, 马剑钢. 化学气相沉积法制备β-Ga2O3纳米结构及其缺陷发光性质研究[J]. 发光学报, 2017, 38(10): 1273. XUE Jin-ling, MA Jian-gang. Defects Luminescence Behavior of β-Ga2O3 Nanostructures Synthesized by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2017, 38(10): 1273.
PDF全文
