研究了在湿法腐蚀GaN衬底上生长的ZnO纳米棒阵列的微结构和光学性能。相比于未经腐蚀及腐蚀5 min、10 min的GaN上生长的ZnO纳米棒阵列, 在腐蚀8 min的GaN上生长的ZnO纳米棒阵列最细密, 光学性能最好, 其相应PL光谱峰强积分比IUV/Ivis最大(70.92)。因为此时GaN衬底中的位错基本全部在表面露头, ZnO容易附着而形成更多的形核种子, 并且衬底的位错在表面的边缘有助于诱导ZnO晶体的外延生长, 所以ZnO棒更加细密, 晶体质量更高, 从而光学性能更好。

1-D ZnO nanorods arrays were fabricated on the wet etched GaN substrates and the microstructure and optical properties were studied. Compared with ZnO nanorods grown on GaN with no corrosion and corrosion for 5 min and 10 min, the nanorod arrays with the etching time of 8 min are the finest and have the best optical properties, besides its corresponding PL spectral peak integral ratio IUV/Ivis is the largest. Because the dislocations in the GaN substrate with the etching time of 8 min are almost entirely in the surface outcrops, and the ZnO nanorods grown on it are easy to attach to form more nucleated seeds, furthermore it is helpful to induce the helical growth of ZnO crystals when the dislocations of the substrate are at the edge of the surface. Therefore, the ZnO nanorods are more compact and uniform, and the crystal quality and optical properties are more ideal.