发光学报, 2017, 38 (10): 1327, 网络出版: 2017-10-17  

GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性

Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors
作者单位
1 中国农业大学理学院 应用物理系, 北京 100083
2 中国科学院半导体研究所 集成光电子国家重点实验室, 北京 100083
摘要
研究了p-i-n型和肖特基型GaN基紫外探测器的响应光谱和暗电流特性。实验发现, 随着p-GaN层厚度的增加, p-i-n型紫外探测器的响应度下降, 并且在短波处下降更加明显。肖特基探测器的响应度明显比p-i-n结构高, 主要是由于p-GaN层吸收了大量的入射光所致。肖特基型紫外探测器的暗电流远远大于 p-i-n型紫外探测器的暗电流, 和模拟结果基本一致, 主要是肖特基型探测器是多子器件, 而p-i-n型探测器是少子器件。要制备响应度大、暗电流小的高性能GaN紫外探测器, 最好采用p-GaN层较薄的p-i-n结构。
Abstract
The spectral response and dark current of p-i-n type and Schottky barrier GaN-based ultraviolet detectors are investigated. It is found that the responsivity of p-i-n detectors decreases with increasing thickness of p-GaN layer in p-i-n structure detectors , and the downward trend of responsivity is more pronounced at shorter wavelength of incident light . The responsivity of the Schottky barrier detector is obviously higher than that of the p-i-n structure, mainly because a lot of incident photons are absorpted in the p-GaN layer. The dark current of Schottky barrier ultraviolet detectors is far larger than the p-i-n ultraviolet detectors, and the results are basically consistent with the simulations, mainly because the Schottky detectors are majority carrier devices, and p-i-n detectors are minority carrier devices. To fabricate high performance GaN ultraviolet detectors, it is better to employ p-i-n structure with very thin p-GaN layer.

易淋凯, 黄佳琳, 周梅, 李春燕, 赵德刚. GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性[J]. 发光学报, 2017, 38(10): 1327. YI Lin-kai, HUANG Jia-lin, ZHOU Mei, LI Chun-yan, ZHAO De-gang. Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors[J]. Chinese Journal of Luminescence, 2017, 38(10): 1327.

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