红外与毫米波学报, 2017, 36 (5): 543, 网络出版: 2017-11-21
具有86 mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管
86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2
MoS2场效应晶体管 良好的亚阈值斜率 SiO2栅介质 界面态密度 MoS2 FETs excellent subthreshold swing SiO2 dielectric interface state density
摘要
在SiO2/Si(P++)衬底上制备了多层MoS2背栅器件并进行了测试.通过合理优化和采用10 nm SiO2 栅氧, 得到了良好的亚阈值摆幅86 mV/dec和约107倍的电流开关比.该器件具有较小的亚阈值摆幅和较小的回滞幅度, 表明该器件具有较少的界面态/氧化物基团吸附物.由栅极漏电造成的漏极电流噪声淹没了该器件在小电流(~10-13 A)处的信号, 限制了其开关比测量范围.基于本文以及前人工作中MoS2器件的表现, 基于薄层SiO2栅氧的MoS2器件表现出了良好的性能和潜力, 显示出丰富的应用前景.
Abstract
Back-gated (BG) Multi-layer MoS2 field effect transistors (FETs) have been fabricated on SiO2/Si(P++) substrate and electrically characterized. By optimizing the fabrication process and scaling down the SiO2 thickness to 10 nm, the device exhibit excellent switching performance with a subthreshold swing of 86 mV/dec and an Ion/Ioff ratio ~107. The little hysteresis and small SS jointly suggest tiny magnitude of interface traps or attached oxidants. The noise current induced by gate leakage can affect the measured switch ratio by overwhelming the effective Ioff current defined by VDS. According to the behaviors of MoS2 FETs expressed by this work and others’, BG devices with SiO2 insulator present good performance and valuable potentials underutilized for rich applications.
刘强, 蔡剑辉, 何佳铸, 王翼泽, 张栋梁, 刘畅, 任伟, 俞文杰, 刘新科, 赵清太. 具有86 mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管[J]. 红外与毫米波学报, 2017, 36(5): 543. LIU Qiang, CAI Jian-Hui, HE Jia-Zhu, WANG Yi-Ze, ZHANG Dong-Liang, LIU Chang, REN Wei, YU Wen-Jie, LIU Xin-Ke, ZHAO Qing-Tai. 86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2[J]. Journal of Infrared and Millimeter Waves, 2017, 36(5): 543.