对纳米级金属氧化物半导体场效应管器件提出了改进的小信号模型.该改进模型中综合考虑了馈线的趋肤效应和器件多胞结构的影响.提取过程中, 根据可缩放规律, 由传统模型的参数推导出元胞参数.将模型应用于8×0.6×12 μm (栅指数×栅宽×元胞数量)、栅长为90 nm的MOSFET器件在1~40 GHz范围内的建模, 测试所得S参数和模型仿真所得S参数能够高度地吻合.

An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.