完成1 880 nm高阶锑化镓侧向耦合分布反馈半导体激光器的制备。采用侧向耦合(Lateral coupled)结构使得外延材料可以一次生长完成, 避免了外延层中Al组分容易氧化的特性导致的二次外延生长困难的问题, 采用接触式紫外光刻技术制备了高阶光栅, 大大降低了激光器的制备成本, 实现了室温1 880 nm单模连续波长激射, 最大输出功率14.5 mW, 波长随温度漂移速率0.000 5 nm/mA。

Complete a high order GaSb-based laterally coupled distributed-feedback(LC-DFB) lasers emitting at 1 880 nm wavelength. The structure of lateral coupled allows the epitaxial material to be completed at one time and avoids the problem of the second epitaxial growth due to the characteristics of easy oxidation in the epitaxial layer Al components. By using contact type UV lithography to fabricate high order gratings, have greatly reduced the preparation cost of the laser. At room temperature the lasers emitted the maximum power of 14.5 mW in a single longitudinal mode at 1 880 nm and the current dependent wavelength tuning coefficient of 0.000 5 nm/mA was measured for the laser output.