为了实现高功率905nm InGaAs脉冲激光二极管激光脉冲宽度和峰值功率可调, 采用现场可编辑门阵列产生触发脉冲、集成模块EL7104C作为金属氧化物半导体场效应晶体管(MOSFET)驱动、以MOSFET为核心开关器件控制高压模块和储能电容之间充放电的方法, 设计了脉冲激光二极管驱动电路, 对驱动电流特性进行了理论分析和实验验证, 取得了不同电容和高压条件下的电流脉宽和峰值数据, 分析了具体变化关系, 并以此进行了光谱和功率-电流特性测试。结果表明, 影响驱动电流脉宽和峰值电流的关键因素是电容大小和充电高压, 脉冲激光二极管驱动电流峰值在0A～40A、脉宽20ns～100ns时可控调节, 脉冲激光二极管最大峰值功率输出可达40W, 实现了脉冲式半导体激光器输出功率和脉冲宽度的可控调节。该设计与分析对近红外高功率脉冲激光器的可控驱动设计具有一定的实用参考意义。

In order to realize the adjustment of pulse width and peak power of a high power 905nm InGaAs pulse laser diode, field-programmable gate array (FPGA) was adopted to generate trigger pulse, the integrated module EL7104C was used as the driver of metal oxide semiconductor field effect transistor (MOSFET) and the switching device with MOSFET as the core was used to control the charging and discharging between the high voltage module and energy storage capacitor. The pulsed laser diode driver circuit was designed. The driving current characteristics were theoretically analyzed and experimentally verified. Pulse width and peak data were obtained under different capacitance and high voltage conditions. The specific change relationship was analyzed. The spectrum and power-current characteristics were tested. The results show that, the key factors affecting the driving current pulse width and peak current were the capacitor size and charging voltage. The pulse laser diode can be controlled with peak drive current from 0A to 40A and pulse width from 20ns to 100ns. The maximum peak power output of pulsed laser diode is up to 40W. The controllable modulation of output power and pulse width of a pulsed semiconductor laser is realized. The design and analysis have practical reference significance for the controllable driving design of near infrared high power pulsed lasers.