GaN材料在高频、高功率、高温、高密度集成电子器件等领域具有广阔的应用前景,是全球半导体领域研究的前沿和热点。近几年,对低接触电阻率的金属/GaN欧姆接触的研究取得了巨大 进步,但金属/GaN欧姆接触仍是制约GaN器件发展的重要因素之一,激光技术的引进为金属/GaN欧姆接触的实现提供了新方法。总结了激光辐照改善GaN材料欧姆特性的研究,介绍了准分子激光 辐照对GaN材料空穴浓度的改变及其欧姆接触特性改善机理的研究进展,讨论了激光辐照 GaN 获得低欧姆接触电阻率的方案,以便探究获得更优良金属/GaN 欧姆接触的研究方向。

GaN materials have wide application prospects in the fields of high frequency, high power, high temperature and high-density integrated electronic devices etc, which is forefront and hot spots in global semiconductor field. In recent years, great progress has been made in the research of low contact resistivity of metal/GaN Ohmic contact. However, the metal/GaN Ohmic contact is still one of the most important factors that restrict the development and application of GaN devices. The introduction of laser technology provides a new method for the realization of Ohmic contact of metal /GaN. Investigation of Ohmic properties improvement of GaN materials by laser irradiation is summarized. Research progress of the excimer laser irradiation on the hole concentration change and improvement of GaN materials Ohmic contact properties is introduced. The low Ohmic contact resistivity scheme for GaN is discussed in order to explore the direction of better metal/GaN Ohmic contact.