采用旋涂工艺与蒸镀工艺结合的方法制备了PBDT-TT-F∶PCBM体异质结红光探测器, 研究了活性层的混合比例和厚度、退火温度等因素对器件光电特性的影响。实验结果表明: 活性层PBDT-TT-F∶PCBM的混合质量比为1∶1.5、厚度为150 nm、退火温度为100 ℃、时间为15 min时制备的器件性能最佳, 在波长为650 nm、功率为6.6 mW/cm2的光照下, 探测器光电流密度可达到0.85 mA/cm2, 光响应度达到128 mA/W。

PBDT-TT-F∶PCBM based heterojunction red photodetectors were fabricated by the experimental method combined with spin coating process and vapor deposition process. The effects of the mixing degree and thickness of the active layer, the annealing temperature and other factors on the photoelectric properties of the device were studied. The experimental results show that the performance of the device is the best with the mixing mass ratio of PBDT-TT-F∶PCBM of 1∶1.5, the thickness of 150 nm, the annealing temperature of 100 ℃, and the annealing time of 15 min, respectively. The photocurrent density of the diode is 0.85 mA/cm2, and the light response is 128 mA/W.