用分子束外延在GaAs (001)衬底上生长了两个量子阱结构的霍尔器件, 一个是没有掺杂的量子阱结构, 一个是Si-δ掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明, 在300 K下, Si-δ掺杂的量子阱结构的电子迁移率高达25 000 cm2·V-1·s-1, 并且该器件输入电阻和输出电阻较低。同时, Si-δ掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。

An unintentionally doped AlSb/InAs quantum well (QW) structure and a Si-δ doped quantum well structure on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). The dependence of sheet electron density and electron mobility on the measurement temperature were investigated. It is found that electron mobility as high as 25 000 cm2·V-1·s-1 has been achieved for 300 K in the Si-δ doped quantum well structure. The Hall devices with high sensitivity and good temperature stability were fabricated based on the Si-δ doped AlSb/InAs quantum well structures. Their sensitivity is markedly superior to Hall devices of an unintentionally doped AlSb/InAs quantum well.