光电子技术, 2017, 37 (2): 124, 网络出版: 2017-12-25
工业化N型高效双面晶体硅太阳电池扩散工艺研究
Investigation of Doping Profile in Industrial N-type High-efficiency Bifacial Silicon Solar Cells
摘要
采用磷硼共扩散的方法制备了N型高效双面电池,通过优化背场及发射极扩散工艺,研究了扩散工艺曲线对电池电性能参数的影响机理。实验结果表明,降低背场扩散方块电阻可提高电池填充因子,同时造成开路电压(Voc)和短路电流(Isc)降低,需要在背场饱和电流密度(J0BSF)和填充因子(FF)之间找到一个平衡点;降低发射极表面杂质浓度和方块电阻并适当的增加结深,可改善与金属化栅线的接触。正面采用低浓度深结扩散工艺可改善Voc和FF,减少复合,提高Isc,电池效率增加了0.2%,平均效率达到20.41%。
Abstract
N-type high-efficiency bifacial solar cells were fabricated by co-diffusing phosphorous and boron. The effect of the diffusion on the electrical performance was investigated by optimizing the emitter and the back surface field (BSF). The results showed that fill factor (FF) increased, while the open-circuit voltage (Voc) and the short-circuit current (Isc) decreased as a result of the decrease of sheet resistance of BSF. There was a balance between BSF saturation current density (J0BSF) and FF. The contact of metallization was improved by decreasing emitter peak concentration and sheet resistance with a suitable deeper junction. Lower peak concentration with deeper junction could improve Voc, FF and Isc. The cells′ efficiency increases 0.2%, and the average efficiency could reach 20.41%.
马继奎, 任军刚, 董鹏, 宋志成, 程基宽, 郭永刚. 工业化N型高效双面晶体硅太阳电池扩散工艺研究[J]. 光电子技术, 2017, 37(2): 124. MA Jikui, REN Jungang, DONG Peng, SONG Zhicheng, CHENG Jikuan, GUO Yonggang. Investigation of Doping Profile in Industrial N-type High-efficiency Bifacial Silicon Solar Cells[J]. Optoelectronic Technology, 2017, 37(2): 124.