光电工程, 2017, 44 (12): 1253, 网络出版: 2018-01-17  

Research and development of femtosecond-laser hyperdoped silicon

Research and development of femtosecond-laser hyperdoped silicon
作者单位
1 Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, China
2 Faculty of Science, Guangxi University for Nationalities, Nanning 530006, China
摘要
Abstract
Silicon one of the most abundant elements in the earth's crust has a large impact on modern industry. It is an extremely versatile material with various applications ranging from solar energy to electronic devices. After decades of process, the crystalline silicon solar cell has been successfully commercialized all over the world due to its low cost and high effi-ciency. As the fundamental component of integrated circuits, silicon-based chips have shown outstanding performance in computers and cell phones. Surprisingly silicon is also a promising host material for the new generation of quantum devices owing to its excellent properties of spin. Definitely it is the core material and classical platform among various materials in the world. However, there are still some blocks which limit its applications, eg. The bandgap of crystalline silicon is only 1.12 eV (~1100 nm), which prohibited the usage in far-infrared range. The carrier mobility of silicon is not high enough, which limited performance of electronic devices.

Zixi Jia, Song Huang, Xiaorong Jin, Ming Yang, Zhandong Chen, Jianghong Yao, Qiang Wu, Jingjun Xu. Research and development of femtosecond-laser hyperdoped silicon[J]. 光电工程, 2017, 44(12): 1253. Zixi Jia, Song Huang, Xiaorong Jin, Ming Yang, Zhandong Chen, Jianghong Yao, Qiang Wu, Jingjun Xu. Research and development of femtosecond-laser hyperdoped silicon[J]. Opto-Electronic Engineering, 2017, 44(12): 1253.

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