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Diluted magnetic characteristics of Ni-doped AlN films via ion implantation

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Abstract

The structural and magnetic properties, as well as the mechanism of magnetization, of Ni-implanted AlN films were studied. AlN was deposited on Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD), and subsequently Ni ions were implanted into the AlN films by Metal Vapor Arc (MEVVA) sources at an energy of 100 keV for 3 h. The films were annealed at 900°C for 1 h in the furnace in order to transfer the Ni ions from interstitial sites to substitutional sites in AlN, thus activating the Ni3+ ions. Characterizations were performed in situ using X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), and vibrating sample magnetometry (VSM), which showed that the films have a wurtzite structure without the formation of a secondary phase after implanting and annealing. Ni ions were successfully implanted into substitutional sites of AlN films, and the chemical bonding states are Ni-N. The apparent hysteresis loops prove that the films exhibited magnetism at 300 K. The room temperature (RT) saturation magnetization moment (Ms) and coercivity (Hc) values were about 0.36 emu/g and 35.29 Oe, respectively. From the first-principles calculation, a total magnetic moment of 2.99 μB per supercell is expected, and the local magnetic moment of a NiN4 tetrahedron, 2.45 μB, makes the primary contribution. The doped Ni atom hybridizes with four nearby N atoms in a NiN4 tetrahedron; then the electrons of the N atoms are spin-polarized and couple with the electrons of the Ni atom with strong magnetization, which results in magnetism. Therefore, the p-d exchange mechanism between Ni-3d and N-2p can be the origin of the magnetism. It is expected that these room temperature, ferromagnetic, Ni-doped AlN films will have many potential applications as diluted magnetic semiconductors.

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DOI:doi 10.1007/s12200-017-0728-2

所属栏目:RESEARCH ARTICLE

基金项目:This work was supported by the National Key R&DProgram of China (Nos. 2016YFB0400901, and 2016YFB0400804), the KeyLaboratory of Infrared Imaging Materials and Detectors, Shanghai Institute ofTechnical Physics, Chinese Academy of Sciences (No. IIMDKFJJ-15-07),the National Natural Science Foundation of China (Grant Nos. 61675079,11574166, and 61377034), and the Director Fund of WNLO.

收稿日期:2017-04-12

修改稿日期:2017-07-13

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Chong ZHAO:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Qixin WAN:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Jiangnan DAI:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Jun ZHANG:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Feng WU:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Shuai WANG:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Hanling LONG:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Jingwen CHEN:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Cheng CHEN:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Changqing CHEN:Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

联系人作者:Jiangnan DAI(daijiangnan@hust.edu.cn)

备注:Chong Zhao received the B.E. degree from Wuhan University of Technology in 2013, and the M.E. degree from Huazhong University of Science and Technology in 2017. His current research interest is diluted magnetic semiconductor.

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引用该论文

Chong ZHAO,Qixin WAN,Jiangnan DAI,Jun ZHANG,Feng WU,Shuai WANG,Hanling LONG,Jingwen CHEN,Cheng CHEN,Changqing CHEN. Diluted magnetic characteristics of Ni-doped AlN films via ion implantation[J]. Frontiers of Optoelectronics, 2017, 10(4): 363-369

Chong ZHAO,Qixin WAN,Jiangnan DAI,Jun ZHANG,Feng WU,Shuai WANG,Hanling LONG,Jingwen CHEN,Cheng CHEN,Changqing CHEN. Diluted magnetic characteristics of Ni-doped AlN films via ion implantation[J]. Frontiers of Optoelectronics, 2017, 10(4): 363-369

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