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Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode

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Abstract

This study considered the design of an efficient, high brightness polar InGaN/GaN light emitting diode (LED) structure with AlGaN capping layer for green light emission. The deposition of high In (>15%) composition within InGaN quantum well (QW) has limitations when providing intense green light. To design an effective model for a highly efficient InGaN green LEDs, this study considered the compositions of indium and aluminum for InxGa1 - xN QW and AlyGa1 - yN cap layers, along with different layer thicknesses of well, barrier and cap. These structural properties significantly affect different properties. For example, these properties affect electric fields of layers, polarization, overall elastic stress energy and lattice parameter of the structure, emission wavelength, and intensity of the emitted light. Three models with different composition and layer thicknesses are simulated and analyzed to obtain green light with in-plane equilibrium lattice parameter close to GaN (3.189 × 10-10) with the highest oscillator strength values. A structure model is obtained with an oscillator strength value of 1.18×10-1 and least in-plane equilibrium lattice constant of 3.218 × 10-10. This emitter can emit at a wavelength of 540 nm, which is the expected design for the fabrication of highly efficient, bright green LEDs.

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DOI:doi 10.1007/s12200-017-0705-9

所属栏目:RESEARCH ARTICLE

基金项目:The authors thank Dr. Benjamin Damilano and Mr.Philippe Vennéguès, Centre de Recherche sur l’H′et′ero-Epitaxie et sesApplications (CRHEA), Centre National de la Recherche Scientifique(CNRS), Valbonne 06560, France for their support.

收稿日期:2017-02-20

修改稿日期:2017-06-21

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作者单位    点击查看

Sakhawat HUSSAIN:Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh
Tasnim ZERIN:Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh
Md. Ashik KHAN:Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh

联系人作者:Sakhawat HUSSAIN(sakhawat@du.ac.bd)

备注:Sakhawat Hussain received his B.Sc. and M.Sc. degrees from University of Dhaka, Bangladesh in 2007 and 2008, respectively. In 2014, he successfully completed his Ph.D. in Physics (Optoelectronics) from the University of Nice-Sophia Antipolis (UNS), France. During his Ph.D. studies, he worked at the research laboratory of “Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), France” under the opto-electronics group. His research focus was on structural and optical characterization of GaN/InGaN/AlGaN heterostructures as light emitting diodes for yellow-green light emission. His research interests are in group III-Nitride semiconductor materials and their applications. At present, he is working as an Assistant Professor at the Department of Electrical and Electronic Engineering, University of Dhaka, Bangladesh.

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引用该论文

Sakhawat HUSSAIN,Tasnim ZERIN,Md. Ashik KHAN. Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode[J]. Frontiers of Optoelectronics, 2017, 10(4): 370-377

Sakhawat HUSSAIN,Tasnim ZERIN,Md. Ashik KHAN. Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode[J]. Frontiers of Optoelectronics, 2017, 10(4): 370-377

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