采用提拉法生长了双掺杂钕离子(Nd ³⁺)和铟离子(In ³⁺)的同成分LiTaO₃单晶。测量了该单晶的紫外-可见光吸收光谱,分析了该晶体的缺陷结构,得到了铟离子的掺杂浓度阈值。当铟离子掺杂浓度达到该阈值时,In∶Nd∶LiTaO₃晶体的抗光损伤能力显著增强。铟离子取代晶体中的反位T aLi4+,使晶体光电导增大,减弱了光折变效应。In∶Nd∶LiTaO₃晶体在光波长0.808 μm处的吸收峰的半峰全宽为15 nm,吸收截面为5.26×10 ^-21 cm ²。采用0.808 μm半导体激光作为抽运源,钕离子在光波长1.06 μm处出现强烈的荧光带。这些研究结果表明, In∶Nd∶LiTaO₃ 作为多功能晶体可以应用于高功率的光子学或光电子学器件中。

The congruent lithium tantalate (LiTaO3) single crystals doubly-doped with Nd 3+ and In 3+ ions are grown by the Czochralski method. The ultraviolet-visible absorption spectra of these single crystals are measured, the defect structures of these single crystals are analyzed, and the threshold of the doping concentration of In 3+ ion is obtained. When the doping concentration of In 3+ ion reaches this threshold, the optical damage resistance ability of In∶Nd∶LiTaO3 crystals enhances significantly. The replacement of the anti-site T aLi4+ by In 3+ ions enhances the photo-conductivity of crystals and weakens the photorefractive effect. The full width at half maximum of the absorption peak of In∶Nd∶LiTaO3 crystals at the wavelength of 0.808 μm is 15 nm, and the absorption cross-section is 5.26×10 -21 cm 2. With a 0.808 μm semiconductor laser as the pumping source, a strong luminescence band of Nd 3+ ions appears at the wavelength of 1.06 μm. These study results show that the In∶Nd∶LiTaO3 crystals can be applied in high power photonic or integrated optoelectronic devices as the multi-functional crystals.