光子学报, 2018, 47 (3): 0304002, 网络出版: 2018-02-01   

In0.53Ga0.47As/InP雪崩光电二极管响应及电学特性

Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
作者单位
1 贵州大学 大数据与信息工程学院, 贵阳 550025
2 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
摘要
通过分子束外延生长和开管式Zn扩散方法, 制备了低暗电流、宽响应范围的In0.53Ga0.47As/InP雪崩光电二极管.在0.95倍雪崩击穿电压下, 器件暗电流小于10 nA; -5 V偏压下电容密度低至1.43×10-8 F/cm2.在1 310 nm红外光照及30 V反向偏置电压下, 雪崩光电二极管器件的响应范围为50 nW~20 mW, 响应度达到1.13 A/W.得到了电荷层掺杂浓度、倍增区厚度结构参数与击穿电压和贯穿电压的关系: 随着电荷层电荷密度的增加, 器件贯穿电压线性增加, 而击穿电压线性降低; 电荷层电荷面密度为4.8×1012 cm-2时, 随着倍增层厚度的增加, 贯穿电压线性增加, 击穿电压增加.通过对器件结构优化, 雪崩光电二极管探测器实现25 V的贯穿电压和57 V的击穿电压, 且具有低暗电流和宽响应范围等特性.
Abstract
In0.53Ga0.47As/InP Avalanche Photodiode (APD) with low dark current, wide-range response is prepared by molecular beam epitaxy and open-tube zinc diffusion method. The dark current is less than 10 nA at 0.95Vb (Vb is the avalanche breakdown voltage), and the capacitance density is as low as 1.43×10-8 F/cm2 when the bias voltage is -5 V. The response range of APD is 50 nW~20 mW and the responsibility is up to 1.13 A/W under 1 310 nm infrared laser at 30 V reverse bias voltage. The breakdown voltage and punch-through voltage are investigated by changing concentration of the charge layer and thickness of the multiplication layer. The result shows that the punch-through voltage increases linearly, conversely, the breakdown voltage decreases linearly with increasing concentration of the charge layer. Further, the punch-through voltage increases linearly and breakdown voltage also increases with increasing thickness of the multiplication layer, while the surface density of charge layer is 4.8×1012 cm-2. Through optimizing SAGCM-APD device structure, the APD device achieves a 25 V punch-through voltage and a 57 V breakdown voltage, with low dark current, and wide-range response characteristics.

袁正兵, 肖清泉, 杨文献, 肖梦, 吴渊渊, 谭明, 代盼, 李雪飞, 谢泉, 陆书龙. In0.53Ga0.47As/InP雪崩光电二极管响应及电学特性[J]. 光子学报, 2018, 47(3): 0304002. YUAN Zheng-bing, XIAO Qing-quan, YANG Wen-xian, XIAO Meng, WU Yuan-yuan, TAN Ming, DAI Pan, LI Xue-fei, XIE Quan, LU Shu-long. Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode[J]. ACTA PHOTONICA SINICA, 2018, 47(3): 0304002.

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