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Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

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Abstract

In this paper, a substrate removing technique in a silicon Mach–Zehnder modulator (MZM) is proposed and demonstrated to improve modulation bandwidth. Based on the novel and optimized traveling wave electrodes, the electrode transmission loss is reduced, and the electro-optical group index and 50 Ω impedance matching are improved, simultaneously. A 2 mm long substrate removed silicon MZM with the measured and extrapolated 3 dB electro-optical bandwidth of >50 GHz and 60 GHz at the ?8 V bias voltage is designed and fabricated. Open optical eye diagrams of up to 90 GBaud/s NRZ and 56 GBaud/s four-level pulse amplitude modulation (PAM-4) are experimentally obtained without additional optical or digital compensations. Based on this silicon MZM, the performance in a short-reach transmission system is further investigated. Single-lane 112 Gb/s and 128 Gb/s transmissions over different distances of 1 km, 2 km, and 10 km are experimentally achieved based on this high-speed silicon MZM.

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DOI:10.1364/prj.6.000109

收稿日期:2017-10-27

录用日期:2017-12-10

网络出版日期:2017-12-10

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Miaofeng Li:Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaState Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, ChinaNational Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China
Lei Wang:State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, ChinaNational Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China
Xiang Li:State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, ChinaNational Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China
Xi Xiao:State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, ChinaNational Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China
Shaohua Yu:Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaState Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, ChinaNational Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

联系人作者:Xi Xiao(xxiao@wri.com.cn)

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引用该论文

Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, and Shaohua Yu, "Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications," Photonics Research 6(2), 109-116 (2018)

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