通过设计InGaN多量子阱LED有源区的不同结构, 研究了载流子复合机制对LED调制速度的影响。结果显示, 由于窄量子阱LED的载流子空间波函数重叠几率更高, 且电子泄露效应更显著, 所以复合速率更快, 调制带宽更高。In组分为1%的InGaN量子垒LED可提高辐射复合的权重, 使得调制带宽高于GaN量子垒LED; In组分为5%时, 电子泄露和俄歇复合占据主导地位, 且由于这两种复合机制复合速率很快, 所以调制带宽显著提高。

The effect of carrier recombination mechanism on modulation bandwidth of InGaN MQWs LED was investigated with varying MQWs structures. LED with narrow well has a faster modulation speed because of high radiative recombination rate and carrier leakage. LED sample using InGaN barrier with 1% In content has a higher modulation bandwidth than LED with GaN barrier for the reason of higher radiative recombination rate. While in the case of 5% In content, carrier leakage dominates all the recombination mechanisms and crystal defect related SRH and Auger recombination are also severe. In addition, the rate of SRH and Auger recombination is very high, which leads to fast modulation speed.