生产中经常出现常温污渍(Array Mura)不良。针对TFT面板布线细线化及低电阻电极的要求, 纯铝工艺迫切需要新型湿法刻蚀液的对应。目前, 本文通过对比3种产线中测试的刻蚀液, 得出Array Mura的产生主要与纯铝工艺的顶层金属钼的刻蚀后缩进有关, 其中测试的刻蚀液C可以有效控制金属钼的缩进至0.1 μm以内。控制顶层金属钼缩进的主要原因与刻蚀液C的硝酸浓度和添加剂含量有关, 通过控制药液进而控制了刻蚀过程内的电化学反应, 最终使得Array Mura得到了有效的改善, 后续无相关不良发生。采用刻蚀液C刻蚀后线宽、坡度角等相关刻蚀参数均满足要求, 目前已经导入量产使用。

Stainin room temperature (Array Mura) can be found in production. Aiming at the requirements of high precise and low resistance circuit, a new type of wet etching etchant is necessary for the manufacturing in aluminum technology. By comparing three kinds of etchant, we made a conclusion that the shrinkage of Top Mo has played a significant role in the producing of Array Mura. The concentration of nitric acid and other additive can control the process of electrochemical reaction which can drive an obvious improvement in Array Mura by controlling the shrinkage of Top Mo within 0.1 μm. The wet etching etchant C have already fitted all the etching parameters including CD bias and profile, and it also be imported into quantity production.