太赫兹科学与电子信息学报, 2018, 16 (2): 363, 网络出版: 2018-06-09
S波段GaN MMIC Doherty功率放大器
Design of S-band GaN MMIC Doherty Power Amplifier
氮化镓 高电子迁移率晶体管 微波单片集成电路 Doherty功放 GaN High Electron Mobility Transistor Microwave Monolithic Integrated Circuit Doherty PA
摘要
采用 SiC衬底 0.25 μm AlGaN/GaN高电子迁移率晶体管工艺, 研制了一款 S波段 GaN单片微波集成电路 (MMIC)Doherty功率放大器, 在回退的工作状态下仍可以保持较高的效率, 可用于小型基站。为减小芯片尺寸, 采用无源集总元件替代四分之一阻抗变换线; 在输入端没有采用功分器加相位补偿线的结构, 而是设计了一种集总结构的电桥来提高集成度。脉冲测试表明, 在 3~3.2 GHz频率范围内, 饱和输出功率大于 10 W, 在回退 6 dB处的功率附加效率 (PAE)为 38%, 芯片尺寸为 4.0 mm×2.4 mm。
Abstract
An S-band GaN Microwave Monolithic Integrated Circuit Power Amplifier(MMIC PA) is designed and manufactured by exploiting 0.25 μm AlGaN/GaN High Electron Mobility Transistor(HEMT) technologies on SiC substrate. The proposed power amplifier can be applied to the small-cell base. To reduce the size and loss, quarter-wave impedance transformer can be fully integrated using lumped passive elements, and the branch-line couplers are represented by lumped elements in the input matching network. The fabricated PA exhibits, at 3-3.2 GHz in pulse-wave conditions, an output power of 10 W, with a power-added efficiency of 38% at 6 dB of output power back-off. The chip size is 4.0 mm×2.4 mm.
任健, 要志宏. S波段GaN MMIC Doherty功率放大器[J]. 太赫兹科学与电子信息学报, 2018, 16(2): 363. REN Jian, YAO Zhihong. Design of S-band GaN MMIC Doherty Power Amplifier[J]. Journal of terahertz science and electronic information technology, 2018, 16(2): 363.
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