发光学报, 2018, 39 (5): 687, 网络出版: 2018-06-29  

高灵敏度Sb基量子阱2DEG的霍尔器件

Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device
作者单位
西安邮电大学 电子工程学院, 陕西 西安 710121
摘要
用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双δ掺杂构成的Hall器件的新结构, 有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比, 室温下器件电子迁移率从15 000 cm2·V-1·s-1 提高到16 000 cm2·V-1·s-1。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试, 结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气(2DEG)浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。
Abstract
The highly sensitive Hall device made of InAs/AlSb quantum-well structures pseudomorphically grown on the GaAs substrate by molecular beam epitaxy has been developed. The advanced InAs/AlSb Hall device includes double δ-doped layers, which significantly elevate the sheet electron density. Moreover, electron mobility is increased from 15 000 cm2·V-1·s-1 to 16 000 cm2·V-1·s-1 at room temperature, compared with that of an unintentionally doped AlSb/InAs Hall device. AFM measurement results show a smooth surface morphology and high crystalline quality of the samples. The quantum Hall device can be operated in the temperature ranging from 77 K to 300 K. Hall measurements show different scattering mechanism on electron mobility at temperature range. The advanced highly-sensitive InAs/AlSb heterostructure two-dimensional electron gases(2DEG) Hall device including double δ-doped layers is promising in near future.

武利翻, 苗瑞霞, 商世广. 高灵敏度Sb基量子阱2DEG的霍尔器件[J]. 发光学报, 2018, 39(5): 687. WU Li-fan, MIAO Rui-xia, SHANG Shi-guang. Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device[J]. Chinese Journal of Luminescence, 2018, 39(5): 687.

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