Chinese Optics Letters, 2018, 16 (9): 091301, Published Online: Sep. 6, 2018   

A pair of integrated optoelectronic transceiving chips for optical interconnects Download: 669次

Author Affiliations
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract
In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.

Kai Liu, Huize Fan, Yongqing Huang, Xiaofeng Duan, Qi Wang, Xiaomin Ren, Qi Wei, Shiwei Cai. A pair of integrated optoelectronic transceiving chips for optical interconnects[J]. Chinese Optics Letters, 2018, 16(9): 091301.

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