激光与光电子学进展, 2018, 55 (9): 092302, 网络出版: 2018-09-08
高光提取效率倒装发光二极管的设计与优化 下载: 679次
Design and Optimization of Flip-Chip Light-Emitting Diode with High Light Extraction Efficiency
光学器件 发光二极管 光提取效率 倒装 光栅 optical devices light-emitting diode (LED) light extraction efficiency flip-chip grating
摘要
为了提高倒装发光二极管(LED)的光提取效率, 提出在蓝宝石衬底出光面上制备一层SiO2介质光栅, 形成表面光栅倒装LED结构。利用RSOFT软件的CAD模块建立表面光栅倒装LED模型, 随后使用RSOFT软件的LED模块模拟并优化该表面光栅倒装LED。通过模拟优化和理论分析可得, 当p-GaN层厚度hp=220 nm, n-GaN层厚度hn=100 nm, 蓝宝石衬底厚度hs=130 nm, 光栅周期p=260 nm, 光栅厚度hg=20 nm, 光栅占空比f=0.02时, 表面光栅倒装LED的光提取效率可以达到49.12%, 相比于普通最优倒装LED的光提取效率(30.56%)提高了63%。本研究可为后续设计高光提取效率的LED提供参考, 同时亦可为制备器件提供理论指导。
Abstract
In order to improve the light extraction efficiency of flip-chip light-emitting diode (LED), we propose to prepare a SiO2 dielectric grating on the sapphire substrate surface and form a surface grating flip-chip LED structure. The surface grating flip-chip LED model is established by the CAD module of RSOFT software. Then, the LED module of RSOFT software is used to simulate and optimize the surface grating flip-chip LED. Simulation optimization and theoretical analysis show that, when p-GaN layer thickness hp=220 nm, n-GaN layer thickness hn=100 nm, sapphire substrate thickness hs=130 nm, grating period p=260 nm, grating thickness hg=20 nm, grating duty cycle f=0.02, the light extraction efficiency of the surface grating flip-chip LED can reach to 49.12%, compared to the best normal flip-chip LED light extraction efficiency (30.56%), the efficiency raises by 63%. The research can provide theoretical research methods for the future design of LED with high light extraction efficiency, and provide theoretical guidance for the preparation of devices.
江孝伟, 赵建伟, 武华. 高光提取效率倒装发光二极管的设计与优化[J]. 激光与光电子学进展, 2018, 55(9): 092302. Jiang Xiaowei, Zhao Jianwei, Wu Hua. Design and Optimization of Flip-Chip Light-Emitting Diode with High Light Extraction Efficiency[J]. Laser & Optoelectronics Progress, 2018, 55(9): 092302.