中国激光, 2018, 45 (9): 0902002, 网络出版: 2018-09-08   

室温脉冲激光沉积法合成Bi3.95Er0.05Ti3O12薄膜及其介电性能研究 下载: 635次

Bi3.95Er0.05Ti3O12 Thin Films Synthesized by Pulsed Laser Deposition Technique and Their Dielectric Properties at Room Temperature
作者单位
中山大学新华学院, 广东 广州 510520
摘要
采用脉冲激光沉积法, 室温条件下在透明导电玻璃衬底上制备了Bi3.95Er0.05Ti3O12(BErT)薄膜。研究结果表明, 低沉积氧气压下制备的BErT薄膜表面致密, 平整无裂缝, 且呈非晶结构; 当沉积氧气压为3 Pa时, BErT薄膜厚度约为180 nm, 表现出优秀的介电性能, 即当测试频率为1 kHz时, 室温介电常数为52, 介电损耗为0.025。同时, BErT薄膜的介电性能随频率、电压和温度的变化比较稳定, 在可见光区间具有较高的透过率。
Abstract
The Bi3.95Er0.05Ti3O12 (BErT) thin films are prepared on the indium-tin-oxide (ITO)-coated glass substrates at room temperature by the pulsed laser deposition technique. The research results show that, the BErT thin film prepared under a low deposition oxygen pressure possesses a dense and uniform surface without cracks, and an amorphous structure. Under a 3 Pa deposition oxygen pressure, the BErT thin film has a thickness of about 180 nm and shows outstanding dielectric characteristics, such as a dielectric constant of 52 at room temperature and a dielectric loss of 0.025 at the test frequency of 1 kHz. Meanwhile, the dielectric properties of the BErT thin film show a relative stability when the frequency, the voltage and the temperature change and also has a relatively high optical transmissivity in the visible light regime.

梁立容, 魏爱香, 莫忠. 室温脉冲激光沉积法合成Bi3.95Er0.05Ti3O12薄膜及其介电性能研究[J]. 中国激光, 2018, 45(9): 0902002. Liang Lirong, Wei Aixiang, Mo Zhong. Bi3.95Er0.05Ti3O12 Thin Films Synthesized by Pulsed Laser Deposition Technique and Their Dielectric Properties at Room Temperature[J]. Chinese Journal of Lasers, 2018, 45(9): 0902002.

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