通过MOCVD方法在蓝宝石衬底上生长GaN薄膜, 利用离子注入方法将Eu3+离子注入到GaN基质中。X射线衍射结果表明: 经过退火处理后, 修复了部分离子注入所导致的晶格损伤。利用阴极荧光光谱可得到GaN∶Eu3+材料在623 nm处有很强的红光发射, 该发射峰来源于Eu3+离子的内部4f能级跃迁。另外, Eu3+离子注入会在样品中引入电荷转移态, 产生408 nm附近的发光。退火处理有助于获得更强的电荷转移态发光和Eu离子特征发光。GaN基质的黄光峰与Eu离子之间存在能量交换, 将能量传递给Eu离子, 促进Eu离子发光。

GaN thin films were grown on sapphire substrate by MOCVD method. Eu3+ ions were implanted into GaN thin films by ion implantation. After the films were annealed, the crystal quality was improved partly according to X-ray diffraction measurements. The strong red light emission at 623 nm can be observed in the cathodoluminescence spectrum, and is attributed to the internal 4f transition of Eu3+ ions. In addition, the charge transfer state is introduced by ion implantation, results in a luminescence peak at 408 nm. It is found that annealing can help to promote the charge transfer state luminescence and Eu ions luminescence. There is an energy transfer from the yellow peak of GaN matrix to the Eu ions.