随着红外探测技术的不断进步，第三代红外探测器的发展需求日渐明晰。由于带间跃迁工作原理、暗电流抑制效应以及成熟的材料制备技术基础等因素，InAs/GaSb超晶格材料已经成为了第三代红外焦平面探测器的首选制备材料。基于InAs/GaSb超晶格材料的台面结型焦平面器件制备方法主要包括湿法腐蚀技术、干法刻蚀技术以及干湿法结合技术。从文献调研结果来看，湿法腐蚀技术和干法刻蚀技术各有优缺点。湿法腐蚀技术适用于单元以及少像元面阵的制备，其中磷酸系腐蚀液的腐蚀效果最佳；干法刻蚀技术适用于大面阵、小尺寸焦平面阵列的制备，几种氯基刻蚀气体体系以及氯基与甲烷基组合的刻蚀气体体系都表现出了不错的刻蚀效果；干湿法结合技术在干法刻蚀后引入湿法腐蚀工艺以进一步消除刻蚀损伤，从而提高器件性能。对以上三种技术方案进行了介绍和分析。

With the continuous advancement of infrared detector technologies, the demand for the third generation of infrared detector technologies is becoming obvious gradually. Because of the factors of interband transition principle, dark current restrain effect and mature material fabrication technique etc., InAs/GaSb superlattice material becomes the primary choice for the fabrication of the third generation of infrared detectors. The main methods for the fabrication of InAs/GaSb mesa-focal plane arrays are wet etching, dry etching and the combination of dry and wet etching. These three kinds of etching methods have their advantages and disadvantages. The wet etching is suitable for the fabrication of single pixel or the focal plane array with less pixels. Among the wet chemical etching, the solution with phosphoric acid performs best. The dry etching is suitable for the fabrication of large arrays with small pixel spacing. The dry etching using Cl+ and the combination of Cl+ /CH3+ exhibit good etching results. The combination of dry and wet etching is used to add wet chemical etching after dry etching in order to eliminate etching damage and hence enhance device performance. The three kinds of etching methods are presented and analyzed.