为了解决半导体激光器传统刻蚀工艺中侧壁陡直度差和器件难以重复制作的问题, 利用湿法腐蚀与干法刻蚀相结合的刻蚀手段, 对980 nm锥形半导体激光器刻蚀工艺进行优化.通过对台面粗糙度与刻蚀速度的研究, 确定湿法腐蚀液和浓度配比的差异.并分析电感耦合等离子刻蚀对脊波导与腔破坏凹槽表面形貌的影响.研究结果表明, 选择配比为NH3·H2O∶H2O2∶H2O=1∶1∶50的腐蚀液进行湿法腐蚀, 刻蚀速率约为7 nm/s, 速率容易控制.且样品表面具有较好的粗糙度和均匀性, 利用电感耦合等离子刻蚀得到的脊波导与腔破坏凹槽侧壁陡直度良好, 没有出现横向钻蚀的情况.

In order to solve the problems of bad sidewall steepness and device repetition in the traditional etching process of semiconductor laser, the etching process of 980 nm tapered semiconductor laser is optimized by means of the combination of wet etching and dry etching. The difference of wet etching solution and concentration ratio is determined through the study of mesa roughness and etching speed. The effect of inductively coupled plasma etching on the surface morphology of the damaged grooves in ridged waveguide and cavity is analyzed. The results show that the etching rate is about 7 nm/s, and the etching rate is easy to be controlled by wet etching with the ratio of NH3 ·H2O∶H2O2∶H2O=1∶1∶50. The surface of the sample has good roughness and uniformity, the ridge waveguide and cavity etched by inductively coupled plasma have good steepness of the side wall of the groove, and there is no transverse drilling erosion.