本文简要介绍了 nBn势垒阻挡结构器件的提出、发展过程。讨论了 nBn型器件的工作机理及其对暗电流的抑制机理。对比了普通碲镉汞 nBn结构器件与经过优化具备俄歇抑制特点的 NBvN结构器件的性能。总结了碲镉汞 nBn型器件势垒层设计要素及器件价带带阶消除的方法。

In this paper, the proposal and development of an nBn barrier device are briefly introduced. The operating mechanisms of nBn devices and suppression mechanisms of dark current are also discussed. Meanwhile, we compared the HgCdTe device performance of the nBn structure and NBvN structure, which were optimized with auger suppression character. The barrier layer design factors of the nBn HgCdTe device and methods of eliminating the device’s valence band offset are summarized.