Photonics Research, 2018, 6 (11): 11001062, Published Online: Nov. 11, 2018   

Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon

Author Affiliations
1 Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
3 Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
Abstract
We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than 150 dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.

Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 11001062.

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