采用高温固相反应法制备了Si4+、Ge4+和Sn4+离子掺杂的LiGa5O8∶Cr3+长余辉材料, 系统研究了掺杂对LiGa5O8∶Cr3+光致发光和长余辉性能的影响。实验结果表明, 所制备的系列材料能产生650~800nm的近红外余辉发射, 主发射峰位于717nm, 来源于Cr3+离子的2E→4A2特征跃迁, 与未进行掺杂的样品相比, 掺杂Si4+、Ge4+和Sn4+离子的LiGa5O8∶Cr3+余辉发光强度均得到增强, 余辉性能显著改善。热释光测试结果表明, Si4+、Ge4+和Sn4+离子掺入主要提高了LiGa5O8∶Cr3+的陷阱浓度, 且使得有效陷阱的数量增加, 从而改善了LiGa5O8∶Cr3+的余辉性能。

A series of LiGa5O8∶Cr3+, M4+ (M= Si, Ge, Sn) nearinfrared persistent phosphors were successfully prepared by solid state reaction method. The influence of doping Si4+, Ge4+, or Sn4+ ions on photoluminescence, long persistent luminescence and thermoluminescence properties was systematically investigated. The results indicate that these phosphors exhibit persistent luminescence in the 650~800nm wavelength range dominated at 717nm originated from the characteristic 2E→4A2 transition of Cr3+ ions, and the persistent luminescence performance of phosphors was significantly enhanced after the incorporation of Si4+, Ge4+, or Sn4+ ions. Thermoluminescence spectra indicate that the incorporation of Si4+, Ge4+, or Sn4+ ions contributes to the formation defects and increases the number of traps, thus improving the persistent luminescence properties of phosphors.