半导体光电, 2018, 39 (5): 694, 网络出版: 2019-01-10
Pt负载型TiO2纳米管阵列的制备及其紫外探测性能
Synthesis of Ptloaded TiO2 Nanotube Arrays and Their Ultraviolet Detection Performance
电化学阳极氧化 二氧化钛纳米管 铂 紫外探测 光响应 electrochemical anodic oxidation TiO2 nanotubes Pt ultraviolet detection photoresponse
摘要
首先利用电化学阳极氧化方法在钛箔上合成整齐有序的TiO2纳米管阵列（TNA）; 然后采用电化学沉积的方法在纳米管表面均匀沉积高功函数的Pt纳米颗粒以构建Pt/TNA肖特基结, 通过SEM、EDS和XRD等表征方法研究了Pt/TNA肖特基结的表面形貌和结构; 最后通过测试不同光照强度下的电压电流(VI)和电流时间(It)曲线研究了Pt/TNA肖特基结的紫外光电性能。实验发现, 在1V偏压和光照强度为1.37mW/cm2的375nm紫外光照射下, Pt/TNA肖特基结的光电流可达3.71μA, 响应度为0.015A/W, 外量子效率为5.11%, 光响应因子高达1892.8, 表明紫外光电探测性能得到显著提高。
Abstract
Highly ordered TiO2 nanotube arrays (TNA) were fabricated by electrochemical anodic oxidation method on Ti foil. Then an electrochemical deposition method was applied to deposit Pt nanoparticles with high work function on surface of the TiO2 nanotube arrays to form Pt/TNA Schottky junction. Pt/TNA Schottky junction was characterized by SEM, EDS and XRD. The photoelectric performance of Pt/TNA Schottky junction was researched by testing voltagecurrent(VI) and currenttime(It) curves under different light intensity. The photocurrent of 3.71μA, responsivity of 0.015A/W, external quantum efficiency of 5.11% and photoresponse factor of 1892.8 were realized under 375nm UV illumination (1.37mW/cm2) at a forward bias of 1V.
程宏伟, 李刚, 郭丽芳, 程再军. Pt负载型TiO2纳米管阵列的制备及其紫外探测性能[J]. 半导体光电, 2018, 39(5): 694. CHENG Hongwei, LI Gang, GUO Lifang, CHENG Zaijun. Synthesis of Ptloaded TiO2 Nanotube Arrays and Their Ultraviolet Detection Performance[J]. Semiconductor Optoelectronics, 2018, 39(5): 694.
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