采用射频磁控溅射方法在蛋白质基底上成功地制备了ZnO薄膜, 研究了不同靶基距、氩氧比和溅射功率条件对ZnO薄膜性质的影响。结果表明, 较小的靶基距有助于ZnO薄膜的c轴择优取向生长。我们还发现, 沉积于玉米蛋白质基底的ZnO薄膜存在不同程度的张应力, 当Ar/(Ar+O2)为0.7时, ZnO薄膜内的张应力最小。ZnO近带边发光峰有不同程度的红移, 我们认为, 这是由于晶界势垒和氧空位Vo造成的。随着溅射功率的增大, 薄膜生长速率显著加快, 晶粒尺寸增大, ZnO的近带边发光峰位逐渐趋向于理论值。

ZnO films were deposited on zein by radio frequency(RF) magnetron sputtering technique. We investigated the influences of deposition parameters, such as target-to-substrate distance, Ar/O2 ratio and sputtering power on the properties of ZnO films. The results show that c-axis preferred orientation of ZnO films is obtained at small target-to-substrate distance. We also find that ZnO films deposited on zein is in a state of tensile stress, whereas the film deposited at Ar/(Ar+O2) ratio of 0.7 has the lowest tensile stress. The near-band-edge peaks of ZnO films in photoluminescence spectra show blueshifts. We speculate that the blueshifts are caused by the oxygen vacancy and the electrostatic potentials that exist at the grain boundaries. As the sputtering power increases, the deposition rate and the grain size of ZnO films increase, the near-band-edge peak of ZnO film shifts toward the theoretical value gradually.