Photonics Research, 2017, 5 (6): 060000B7, Published Online: Jan. 10, 2019
Tensile-strained Ge/SiGe multiple quantum well microdisks
(250.5590) Quantum-well -wire and -dot devices (250.5230) Photoluminescence (310.1860) Deposition and fabrication (160.6000) Semiconductor materials.
Abstract
An efficient monolithically integrated laser on Si remains the missing component to enable Si photonics. We discuss the design and fabrication of suspended and tensile-strained Ge/SiGe multiple quantum well microdisk resonators on Si for laser applications in Si photonics using an all-around SiNx stressor. An etch-stop technique in the Ge/SiGe system is demonstrated and allows the capability of removing the defective buffer layer as well as providing precise thickness control of the resonators. Photoluminescence and Raman spectroscopy indicate that we have achieved a biaxial tensile strain shift as high as 0.88% in the microdisk resonators by adding a high-stress SiNx layer. Optical gain calculations show that high positive net gain can be achieved in Ge quantum wells with 1% external biaxial tensile strain.
Xiaochi Chen, Colleen S. Fenrich, Muyu Xue, Ming-Yen Kao, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Yijie Huo, Theodore I. Kamins, James S. Harris. Tensile-strained Ge/SiGe multiple quantum well microdisks[J]. Photonics Research, 2017, 5(6): 060000B7.