以Gd2O3、SiO、稀土氧化物为原料采用高温固相法制备了Gd2(1-x)SiO5∶2xRE荧光粉体。X射线衍射分析结果表明Gd/Si配比为1.9, BaF2助熔剂用量为5‰, 煅烧条件为1 500 ℃保温3 h得到结晶良好的Gd2SiO5及Gd2SiO5∶RE粉体。光谱分析表明, Gd2SiO5∶Eu荧光粉末激发波段为250~470 nm, 而Gd2SiO5∶Tb为250~320 nm; 前者发射主峰为620 nm(与Eu3+的5D0→7F2对应), 后者为548 nm(与Tb3+的5D4→7F5对应); Eu3+和Tb3+的最佳掺杂量为7%。fa(E) 和发射带fe(E)交叠越大, 则电偶极-电偶极作用机制的跃迁几率越高, Gd3+-Tb3+能带交叠程度大于Gd3+-Eu3+, Tb3+的量子效率要高于Eu3+。

Gd2SiO5∶RE phosphors were prepared by high temperature solid-state method with Gd2O3 and SiO as the raw material. The effects of calcining temperature, Gd/Si atomic ratio and fluxing agent on the Gd2SiO5 crystallized power fabrication were studied systematically, by means of X-ray diffraction (XRD). The optimum calcining condition is holding at 1 500 ℃ for 3 h with Gd/Si atom ratio of 1.9, and BaF2 of 5‰ used as flux. Photoluminescent spectra show that the excitation rang is 250-470 nm for Gd2SiO5∶Eu, while 250-320 nm for Gd2SiO5∶Tb. The strongest peak in the emission spectra is 620 nm (related to Eu3+: 5D0→7F2) for the former phosphor. For the later phosphor, the strongest peak locates at 548 nm (related to Tb3+: 5D4→7F5). The best doping amount is 7% for Eu3+ and 5% Tb3+. The collaboration of fa(E) and fe(E) for Gd3+-Tb3+ is better than that of Gd3+-Eu3+, so the Gd2SiO5∶xTb will have higher quantum yields than Gd2SiO5∶xTb.