应用带保护气进行烧结的方法, 制作了一种双半导体底层碳纳米管薄膜阴极.利用烧结的银浆形成条形银电极, 在条形银电极表面制作了具有相同宽度且平行排列的ZnO掺杂底层和TiO2掺杂底层, 在掺杂底层上面制备了碳纳米管膜层.由于保护气的防氧化屏蔽, 碳纳米管膜层中的碳纳米管未受损害, ZnO粒子和TiO2粒子也在烧结过程中得到了很好地保护, 双半导体底层碳纳米管薄膜阴极获得更优的电子发射特性, 且电子发射稳定性也得到有效增强.与普通条形银电极碳纳米管阴极相比, 双半导体底层碳纳米管薄膜阴极能够将开启电场从2.09 V/μm降低到1.91 V/μm, 将最大电子发射电流从1 653.5 μA提高到2 672.9 μA.在2.69 V/μm电场作用下, 普通条形银电极碳纳米管阴极的电子发射电流仅为421.1 μA, 而双半导体底层碳纳米管薄膜阴极的电子发射电流能够达到723.5 μA.从发射电流稳定性实验曲线可以看出, 双半导体底层碳纳米管薄膜阴极实现了稳定的电子发射, 表明ZnO掺杂底层和TiO2掺杂底层能够应用于真空环境.利用数码相机获得了具有良好质量的发射图像, 验证了双半导体底层碳纳米管薄膜阴极制作的可行性和适用性.

Utilizing the sintering method with shielding gas, a double semiconductor underlayer carbon nanotube (DSU-CNT) film cathode was fabricated, where stripe silver electrode was formed with the sintered silver slurry, while ZnO and TiO2 blending underlayers of the same width were parallel-arranged over stripe silver electrode surface, with the CNT film layer being prepared over the above underlayers. Due to better protection from oxidation by the shielding gas, no CNTs in CNT film layer were damaged, and ZnO and TiO2 particles were also shielded in the sintering process. Thus, improved electron emission characteristics of DSU-CNT film cathode were achieved, and the electron emission stability was also efficiently enhanced. As compared to the common stripe silver electrode CNT cathode, the turn-on electric field of DSU-CNT film cathode could be reduced from 2.09 V/μm to 1.91 V/μm, the maximum electron emission current could be increased from 1 653.5 μA to 2 672.9 μA. With the same electric field of 2.69 V/μm, the emission current of common stripe silver electrode CNT electrode was only 421.1 μA, while that of DSU-CNT film cathode could reach 723.5 μA. Seen from the experimental curves of emission current stability, the stable electron emission for DSU-CNT film cathode was realized, which proved that ZnO and TiO2 blending underlayers could be used in the vacuum environment. A satisfactory emission image was obtained, which indicated that the fabrication of DSU-CNT film cathode was feasible and the proposed DSU-CNT film cathode was a suitable electron emission cathode.