中国激光, 2019, 46 (4): 0403002, 网络出版: 2019-05-09
退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响 下载: 1421次
Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film
材料 光学性能 电学性能 铝掺杂氧化锌薄膜 退火 原子层沉积技术 materials optical properties electrical properties aluminum-doped ZnO films annealing atomic layer deposition technique
摘要
研究了退火温度对原子层沉积(ALD)生长的铝掺杂氧化锌(AZO)薄膜光电性能的影响,结果发现:AZO薄膜在600 ℃退火后,X射线衍射峰的半峰全宽从未退火时的0.609°减小到0.454°,晶体质量得到提升;600 ℃退火后,薄膜的表面粗糙度从未退火时的0.841 nm降低至0.738 nm;400 ℃退火后,薄膜的载流子浓度和迁移率均达到最大值,分别为1.9×10
19 cm
-3和4.2 cm
2·V
-1·s
-1,之后随着退火温度进一步升高,载流子浓度和迁移率降低;退火温度由300 ℃升高到600 ℃过程中薄膜的吸收边先蓝移后红移。
Abstract
The effects of annealing temperature on the photoelectric properties of Al-doped ZnO (AZO) film grown with atomic layer deposition (ALD) technique are investigated. It is found that the full width at half maximum of X-ray diffraction peaks of the AZO thin film decreases from 0.609° before annealing to 0.454° after annealing at 600 ℃, and the crystal quality is improved. The surface roughness of thin film reduces from 0.841 nm before annealing to 0.738 nm after annealing at 600 ℃. The carrier concentration and mobility ratio of the thin film annealed at 400 ℃ are the largest, and they are 1.9×10
19 cm
-3 and 4.2 cm
2·V
-1·s
-1, respectively. However, as the annealing temperature continues to increase, the carrier concentration and mobility ratio decrease. With the annealing temperature increases from 300 ℃ to 600 ℃, the absorption edge of the thin film shows blue-shift at first and then red-shift.
郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏. 退火温度对铝掺杂氧化锌薄膜晶体质量及光电性能的影响[J]. 中国激光, 2019, 46(4): 0403002. Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002.