通过硅基微结构与二氧化钒(VO2)相变薄膜相结合，设计并实现了一种电控太赫兹幅度调制器件。该调制器具有很高的太赫兹波透射率与极低的器件插损，同时具有大的工作带宽和调制深度。仿真和实验测试结果表明，该调制器对太赫兹波的增透响应带宽为0.25~0.95 THz波段。在0.4~0.85 THz频段内(约450 GHz宽带)的透射率超过80%，相较于硅衬底的透射率增加了10%以上，且透射率最高可达85%。对该器件电调控后，调制深度可达76%以上，器件透射率变化幅度可达65%。因低插损、大调制幅度以及宽工作带宽，该太赫兹调制器在太赫兹成像和通信系统中具有重要的应用价值。

An electronically controlled terahertz amplitude modulation device is designed and implemented by integrating silicon-based microstructure with vanadium dioxide phase-change film. This device has a high transmittance of terahertz waves and very low insertion loss of the device, while having a large operating bandwidth and modulation depth. Simulation and experimental results show that the modulator's response bandwidth for the increased transmission effect of terahertz waves is 0.25-0.95 THz. The transmission of the modulator is over 80% in the frequency range of 0.4-0.85 THz, and compared with the transmission of high resistance silicon wafer, it is increased by over 10%. And the transmittance of the modulator can be up to 85%. After the device is electrically controlled, the modulation depth can reach more than 76%，and the change range of the modulator's transmittance can reach 65%. An important application value of the THz modulator is demonstrated in terahertz imaging and communication system, because of its low insertion loss, large modulation amplitude and wide working bandwidth.