太赫兹科学与电子信息学报, 2019, 17 (1): 162, 网络出版: 2019-04-07
一种HEMT器件可缩放的非线性紧凑模型
A scalable non-linear compact model applied to HEMT devices
EE-HEMT模型 高电子迁移率晶体管 非线性模型 紧凑模型 EE-HEMT model High Electron Mobility Transistor non-linear model compact model
摘要
提供了一种应用于高电子迁移率晶体管(HEMT)的非线性紧凑模型。该模型针对传统的EE-HEMT模型理想缩放规律不准确的问题，提出采用一元函数拟合、二元曲面拟合方法，对其尺寸缩放和温度缩放规律进行修正。修正后的非线性模型可以准确地模拟HEMT器件的直流I-U、S参数和大信号特性。并将该模型应用于一款0.25?μm栅长的GaAs pHEMT工艺，对比不同尺寸的器件在高低温条件下模型仿真结果和实测结果，两者吻合良好，验证了该模型的准确性。
Abstract
A scalable Enterprise Edition High Electron Mobility Transistor(EE-HEMT) based non-linear model is presented. One dimensional function fitting as well as binary surface fitting methods are employed to rectify the original ideal scaling routines of EE-HEMT model, which makes this new model scale with device dimension and temperature more precisely and capable of predicting the Direct Current(DC) I-U，S-parameters and large signal performance. The accuracy of the model has been proved by comparing the simulation results with the measurement data of a 0.25 μm GaAs pHEMT process under different ambient temperatures for various device dimensions.
陈勇波, 刘文, 汪昌思, 孔欣, 赵佐. 一种HEMT器件可缩放的非线性紧凑模型[J]. 太赫兹科学与电子信息学报, 2019, 17(1): 162. CHEN Yongbo, LIU Wen, WANG Changsi, KONG Xin, ZHAO Zuo. A scalable non-linear compact model applied to HEMT devices[J]. Journal of terahertz science and electronic information technology, 2019, 17(1): 162.
PDF全文
