为实现毫米波放大器芯片的宽带、高增益和高效率，基于GaAs pHEMT工艺实现高增益，采用四级级联拓扑结构拓展带宽，利用电流复用结构降低直流功耗，采用T型电抗匹配技术实现最佳输出功率和效率匹配，成功实现了一款31~38 GHz频段的毫米波宽带高效率功率放大器芯片。测试结果表明，该功率放大器芯片在31~38 GHz宽带范围内，线性增益为26~29 dB，饱和输出功率为21.5 dBm，动态电流低于100 mA，饱和效率≥37%，在32~35 GHz内最高效率达45%。

In order to achieve broadband millimeter-wave amplifier with high gain and efficiency, GaAs pHEMT technology is employed for obtaining high gain; four-stage circuit topology is utilized for expanding bandwidth; current reuse technology is adopted for reducing DC power consumption; and reactance matching technology is implemented for optimizing output power and efficiency. As result, 31-38 GHz GaAs medium power amplifier Monolithic Microwave Integrated Circuit(MMIC) is successfully realized with broadband and high efficiency. In the frequency form 31 GHz to 38 GHz, the test results show excellent performances with 26-29 dB gain, 21.5 dBm output power, more than 37% Power Added Efficiency(PAE) and only 100 mA dynamic current. Especially, the efficiency of power amplifier has reached 45% at frequency from 32 GHz to 35 GHz.