利用90 nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段(110~170 GHz)单片微波集成电路放大器.两款放大器均采用共源结构, 布线选取微带线.基于器件A设计的三级放大器A在片测试结果表明: 最大小信号增益为11.2 dB@140 GHz, 3 dB带宽为16 GHz, 芯片面积2.6 mm×1.2 mm.基于器件B设计的两级放大器B在片测试结果表明: 最大小信号增益为15.8 dB@139 GHz, 3 dB带宽12 GHz, 在130~150 GHz频带范围内增益大于10 dB, 芯片面积1.7 mm×0.8 mm, 带内最小噪声为4.4 dB、相关增益15 dB@141 GHz, 平均噪声系数约为5.2 dB.放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数.该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义.

In this paper, two D-band (110~170 GHz) monolithic millimeter-wave integrated circuit (MMIC) amplifiers have been designed and realized using 90-nm InAlAs/InGaAs/InP high gain electron mobility transistors (HEMT) technology. The amplifiers are developed in common source and microstrip technology. The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11.2 dB at 140 GHz and 3-dB-bandwidth is 16 GHz with a chip size of 2.6 mm×1.2 mm. The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15.8 dB at 139 GHz and 3-dB-bandwidth is 12 GHz and the gain is higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1.7 mm×0.8 mm. The amplifier B also shows an excellent noise character with noise figure of 4.4 dB when the associa-ted gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5.2 dB over the bandwidth. The amplifier B exhibits a higher gain-per-stage, competitive gain-area ratio and lower noise figure. The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.