红外与毫米波学报, 2019, 38 (2): 02223, 网络出版: 2019-05-10
利用刻蚀工艺制备碲镉汞雪崩光电二极管
HgCdTe avalanche photo diode fabricated by ion beam etching
雪崩光电二极管 离子束刻蚀 增益 过剩噪声因子 HgCdTe HgCdTe avalanche photo diode (APD) ion beam etching(IBE) gain escess noise factor
摘要
碲镉汞雪崩光电二极管是第三代红外焦平面探测器的主要发展方向之一.提出一种利用离子束刻蚀工艺制备碲镉汞雪崩光电二极管器件的方法, 并研究了截止波长、耗尽区厚度与器件增益的关系.利用此方法制备截止波长4.8 μm的中波器件在17 V反向偏置下增益可达1000.对器件进行了噪声频谱测试, 计算了其过剩噪声因子.
Abstract
HgCdTe avalanche photo diode (APD) is one of the developing trends of third generation infrared FPA detectors. This article presents a new method to fabricate HgCdTe APD by ion beam etching (IBE), and discusses the relation of gain to cutoff wavelength and depletion region thickness. A gain of 1000 at a bias of 17 V and a cutoff wavelength of 4.8 μm was achieved. The excess noise factor, F, is calculated after a noise spectrum test.
李浩, 林春, 周松敏, 王溪, 孙权志. 利用刻蚀工艺制备碲镉汞雪崩光电二极管[J]. 红外与毫米波学报, 2019, 38(2): 02223. LI Hao, LIN Chun, ZHOU Song-Min, WANG Xi, SUN Quan-Zhi. HgCdTe avalanche photo diode fabricated by ion beam etching[J]. Journal of Infrared and Millimeter Waves, 2019, 38(2): 02223.
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