光学 精密工程, 2019, 27 (3): 527, 网络出版: 2019-05-30
基于离子束溅射Ta2O5薄膜的紫外吸收膜技术
Ultraviolet absorption film technology based on ion beam sputtering Ta2O5 thin films
离子束溅射技术 紫外吸收薄膜 吸收率 透射率 反射率 ion beam sputtering ultraviolet absorption film absorptivity transmissivity reflectivity
摘要
为获得高性能紫外激光薄膜元件, 急需研制紫外高反射吸收薄膜, 实现吸收损耗的精确测量。本文采用离子束溅射技术, 通过调控氧气流量实现了具有不同吸收的Ta2O5薄膜的制备。以Ta2O5薄膜作为高折射率材料, 设计了355 nm的紫外高反射吸收薄膜。采用离子束溅射沉积技术, 在熔融石英基底上制备了355 nm的吸收薄膜, 对于A=5%的紫外吸收光谱, 在355 nm的透射率、反射率和吸收率分别为0.1%, 95.0%和4.9%; 对于A=12%的紫外吸收光谱, 在355 nm的透射率、反射率和吸收率分别为0.1%, 87.4%和12.5%。实验结果表明, 采用离子束溅射沉积技术, 可以实现不同吸收率的355 nm高反射吸收薄膜的制备, 对于基于光热偏转测量技术的紫外光学薄膜弱吸收测量仪的定标具有重要的意义。
Abstract
To obtain a high-performance ultraviolet laser thin film, developing one that achieves accurate measurement of absorption loss is essential. In this study, Ta2O5 thin films with different absorptivities were deposited on fused quartz substrates using an ion-beam sputtering technique and by changing the oxygen flow. Ta2O5 thin films were used as high refractive index materials, and UV high reflectance absorption thin films of 355 nm were developed. Two types of 355-nm absorption thin films were prepared on fused quartz substrates using an ion-beam sputtering deposition technique. The transmissivity, reflectivity, and absorptivity at a wavelength of 355 nm were 0.1%, 95.0%, and 4.9% for 5% UV absorption spectra, respectively, whereas those at the wavelength of 355 nm were 0.1%, 87.4% and 12.5% for 12% UV absorption spectra, respectively. The experimental results show that the preparation of high reflectance thin films of 355 nm with different absorptivity can be prepared by ion-beam sputtering deposition. This is of great significance to the calibration of UV thin film weak absorption measuring instruments based on photothermal deflection measurement technology.
姜玉刚, 刘华松, 陈丹, 王利栓, 李士达, 刘丹丹, 姜承慧, 季一勤. 基于离子束溅射Ta2O5薄膜的紫外吸收膜技术[J]. 光学 精密工程, 2019, 27(3): 527. JIANG Yu-gang, LIU Hua-song, CHEN Dan, WANG Li-shuan, LI Shi-da, LIU Dan-dan, JIANG Cheng-hui, JI Yi-qin. Ultraviolet absorption film technology based on ion beam sputtering Ta2O5 thin films[J]. Optics and Precision Engineering, 2019, 27(3): 527.