采用ANSYS有限元软件，利用热-结构间接耦合的方法建立单层多道的应力场模型，对选区激光熔化AlSi10Mg应力场进行模拟。分析了内应力的分布和演变规律，以及不同曝光时间和点间距对残余应力的影响。研究发现，温度均匀化后熔池搭接区域的残余应力高(最高残余应力)，中心区域的残余应力低(最低残余应力)。随着ET和PD的增加，最高残余应力逐渐增大。然而，进一步增加PD，缺陷的形成导致应力有所降低。随着ET的增加和PD的降低，最低残余应力增加。

The ANSYS finite element software is used to established a single-layer multi-trace stress field model by thermal-structural indirect coupling method, and the stress field of AlSi10Mg fabricated by selective laser melting is simulated. The distribution and evolution of internal stress and the influence of different exposure times and point distances on residual stress are analyzed. It is found that after the temperature is homogenized, the residual stress in overlap region of molten pool is high (the highest residual stress), and the residual stress in the central region is low (the lowest residual stress). As ET and PD increase, the maximum residual stress gradually increases. However, by further increasing PD, the formation of defects leads to a decrease in stress. As the ET increases and the PD decreases, the minimum residual stress increases.